Highly efficient p-type doping of GaN under nitrogen-rich and low-temperature conditions by plasma-assisted molecular beam epitaxy
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چکیده
منابع مشابه
Carbon Doping of <10-11> GaN by Plasma-Assisted Molecular Beam Epitaxy
Magnesium (Mg) is the most commonly used acceptor dopant in gallium nitride (GaN) devices. Acting as a deep acceptor with an activation energy of ~ 200 meV, Mg can introduce electrical and optical complications. Carbon has been demonstrated to be a possible alternative acceptor dopant atom with a lower activation energy [1]. Carbon-doped GaN (GaN:C) samples were homoepitaxially grown on <10-11>...
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The structural, electrical, and optical properties of GaN grown on 6HSiC(0001) substrates by molecular beam epitaxy are studied. Suitable substrate preparation and growth conditions are found to greatly improve the structural quality of the films. Threading dislocation densities of about 1 × 10 cm for edge dislocations and < 1 × 10 cm for screw dislocations are achieved in GaN films of 0.8 μm t...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2019
ISSN: 2158-3226
DOI: 10.1063/1.5089658